MRFE6S9135HSR3
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Kynix 부품 번호: KY32-MRFE6S9135HSR3
제조업체 부품 번호:

MRFE6S9135HSR3

제품 분류: 집적 칩
제조업체: Freescale / NXP
제품 요약:
  datasheetMRFE6S9135HSR3 Datasheet
꾸러미: NI-880S
수량: 894 PCS
무연 여부 / RoHS 준수 여부: 무연 / RoHS 준수
수분 민감도 레벨(MSL): 3(168 시간)
주문 가능 수량
수량:894즉시 선적 가능
입력 수량:
최소 주문 수량:1
배수:1
구매 구매
1+: $0.00000
10+: $0.00000
100+: $0.00000
500+: $0.00000
1000+: $0.00000
주의사항:하기 폼을 완성하시면 저희가 최대한 빨리 연락드리도록하겟습니다.
*구매수량:   목표를 가격: (USD)
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비고:
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사양꾸러미 지불운송판매 후의 품질보증
제조업체: Freescale / NXP
제품 분류: 집적 칩
특징, 응용

Designed for broadband commercial and industrial applications with frequencies to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large - signal, common - source amplifier applications in 28 volt base station equipment. Typical Single- Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 1000 mA, Pout = 39 Watts Avg., Full Frequency Band, 3GPP Test Model 1, 64 DPCH with 50% Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR @ 0.01% Probability on CCDF. Power Gain 21 dB Drain Efficiency 32.3% Device Output Signal PAR @ 0.01% Probability on CCDF ACPR @ 5 MHz Offset - 39.5 dBc in 3.84 MHz Channel Bandwidth Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, Pout (3 dB Input Overdrive from Rated Pout), Designed for Enhanced Ruggedness Features 100% PAR Tested for Guaranteed Output Power Capability Characterized with Series Equivalent Large - Signal Impedance Parameters Internally Matched for Ease of Use Qualified to a Maximum of 32 VDD Operation Integrated ESD Protection Optimized for Doherty Applications RoHS Compliant In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.


940 MHz, 39 W AVG., 28 V SINGLE W - CDMA LATERAL N - CHANNEL RF POWER MOSFETs

Rating Drain- Source Voltage Gate- Source Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature (1,2) Symbol VDSS VGS Tstg TC TJ Value +150 225 Unit Vdc °C


Characteristic Thermal Resistance, Junction to Case Temperature W CW Case Temperature W CW Symbol RJC Value 0.39 0.48 Unit °C/W


1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955.


Test Methodology Human Body Model (per - A114) Machine Model (per - A115) Charge Device Model (per - C101) Class II (Minimum) A (Minimum) IV (Minimum)


Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)

Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 66 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate- Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, = 400 Adc) Gate Quiescent Voltage (VDD = 28 Vdc, = 1000 mAdc, Measured in Functional Test) Drain- Source On - Voltage (VGS = 10 Vdc, = 2.8 Adc) Dynamic Characteristics (1) Reverse Transfer Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Output Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Input Capacitance (VDS = 28 Vdc, VGS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz) Crss Coss Ciss 343 pF VGS(th) VGS(Q) VDS(on) Vdc IDSS IGSS 1 10 Adc Symbol Min Typ Max Unit


Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1000 mA, Pout 39 W Avg. W - CDMA, = 940 MHz, Single- Carrier W - CDMA, 3.84 MHz Channel Bandwidth Carrier. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. PAR @ 0.01% Probability on CCDF. Power Gain Drain Efficiency Output Peak to - Average Ratio @ 0.01% Probability on CCDF Adjacent Channel Power Ratio Input Return Loss 1. Part internally matched both on input and output. (continued) Gps D PAR ACPR IRL % dB dBc dB


Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued)

Characteristic Video Bandwidth 160 W PEP Pout where - 30 dBc (Tone Spacing from 100 kHz to VBW) IMD3 @ VBW frequency @ 100 kHz <1 dBc (both sidebands) Gain Flatness in 40 MHz Bandwidth @ Pout 39 W Avg. Average Deviation from Linear Phase in 40 MHz Bandwidth @ Pout W CW Average Group Delay @ Pout 135 W CW, = 940 MHz Part to - Part Insertion Phase Variation @ Pout 135 W CW, = 940 MHz, Six Sigma Window Gain Variation over Temperature to +85°C) Output Power Variation over Temperature to +85°C) Symbol VBW 10 Min Typ Max Unit MHz Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1000 mA, - 960 MHz Bandwidth

검색 소자 모델 : "MRFE6" 포함 단어 15
부품 번호 제조업체 꾸러미 수량 제품 요약
MRFE6S9200HR3 Freescale / NXP SMD 4382
MRFE6VP6300HR5 FREESCA NI-780-4 830 RF MOSFET Transistors VHV6 300W50VISM NI780H-4
MRFE6VP5600H FREESCA 88 RF MOSFET Transistors VHV6 600W 50V NI1230H
MRFE6VP61K25HR5 Freescale / NXP SMD 70
MRFE6S9160H Freescale / NXP MODULE 76
MRFE6S9046GN Freescale / NXP MODULE 112
MRFE6S9201HSR3 FREESCAL MODULE 118
MRFE6S9130H Freescale / NXP MODULE 434
MRFE6S9205HS Freescale / NXP MODULE 475
MRFE6S9135HS Freescale / NXP MODULE 480
MRFE6S9046NR1 FREESCAL MODULE 530
MRFE6S9125NB Freescale / NXP MODULE 535
MRFE6S9160HS MODULE 580
MRFE6S9200HS FREESCAL MODULE 630
MRFE6S9130HR3 Freescale / NXP SMD 830
MRFE6S9135HSR3 관련 제품 이미지
left
  • MRFE6S9200HR3
  • MRFE6VP6300HR5
  • MRFE6VP5600H
  • MRFE6VP61K25HR5
  • MRFE6S9160H
  • MRFE6S9046GN
  • MRFE6S9201HSR3
  • MRFE6S9130H
  • MRFE6S9205HS
  • MRFE6S9135HS
  • MRFE6S9046NR1
  • MRFE6S9125NB
  • MRFE6S9160HS
  • MRFE6S9200HS
  • MRFE6S9130HR3
right
MRFE6S9135HSR3 관련 키워드.
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  • MRFE6S9135HSR3 제조업체
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  • MRFE6S9135HSR3 PDF
  • MRFE6S9135HSR3 데이트씨트
  • MRFE6S9135HSR3 그림
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  • 구매 MRFE6S9135HSR3
  • MRFE6S9135HSR3 문의
  • MRFE6S9135HSR3 온라인 주문

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