MRF6VP41KHR7
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Kynix 부품 번호: KY32-MRF6VP41KHR7
제조업체 부품 번호:

MRF6VP41KHR7

제품 분류: 집적 칩
제조업체: Freescale / NXP
제품 요약: MOSFET RF N-CH 50V NI-1230
  datasheetMRF6VP41KHR7 Datasheet
꾸러미: NI-1230
수량: 93 PCS
무연 여부 / RoHS 준수 여부: 무연 / RoHS 준수
수분 민감도 레벨(MSL): 3(168 시간)
주문 가능 수량
수량:93즉시 선적 가능
입력 수량:
최소 주문 수량:1
배수:1
구매 구매
1+: $0.00000
10+: $0.00000
100+: $0.00000
500+: $0.00000
1000+: $0.00000
주의사항:하기 폼을 완성하시면 저희가 최대한 빨리 연락드리도록하겟습니다.
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사양꾸러미 지불운송판매 후의 품질보증
제조업체: Freescale / NXP
제품 분류: 집적 칩
특징, 응용

Designed primarily for pulsed wideband applications with frequencies to 500 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications. Typical Pulsed Performance at 450 MHz: VDD = 50 Volts, IDQ = 150 mA, Pout = 1000 Watts Peak (200 W Avg.), Pulse Width = 100 sec, Duty Cycle = 20% Power Gain 20 dB Drain Efficiency 64% Capable of Handling 10:1 VSWR, @ 50 Vdc, 450 MHz, 1000 Watts Peak Power Features Characterized with Series Equivalent Large--Signal Impedance Parameters CW Operation Capability with Adequate Cooling Qualified to a Maximum of 50 VDD Operation Integrated ESD Protection Designed for Push--Pull Operation Greater Negative Gate--Source Voltage Range for Improved Class C Operation RoHS Compliant In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.


10-500 MHz, 50 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

Rating Drain--Source Voltage Gate--Source Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature (1,2) CW Operation = 25°C Derate above 25°C Symbol VDSS VGS Tstg TJ CW Value to Unit Vdc °C W W/°C


1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product.


Characteristic Thermal Resistance, Junction to Case Temperature 1000 W Pulsed, 100 sec Pulse Width, 20% Duty Cycle, 450 MHz Case Temperature 1000 W CW, 352.2 MHz Symbol RJC Value 0.03 0.15 Unit °C/W


Test Methodology Human Body Model (per JESD22--A114) Machine Model (per EIA/JESD22--A115) Charge Device Model (per JESD22--C101) Class 2 (Minimum) A (Minimum) IV (Minimum)


Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted)

Gate--Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) Drain--Source Breakdown Voltage (ID = 300 mA, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 50 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 100 Vdc, VGS = 0 Vdc) On Characteristics Gate Threshold Voltage (3) (VDS = 10 Vdc, = 1600 Adc) Gate Quiescent Voltage (4) (VDD = 50 Vdc, = 150 mAdc, Measured in Functional Test) Drain--Source On--Voltage (3) (VGS = 10 Vdc, = 4 Adc) Dynamic Characteristics (3) Reverse Transfer Capacitance (VDS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Output Capacitance (VDS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Input Capacitance (VDS = 50 Vdc, VGS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz)


Functional Tests (4) (In Freescale Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 150 mA, Pout 1000 W Peak (200 W Avg.), = 450 MHz, 100 sec Pulse Width, 20% Duty Cycle Power Gain Drain Efficiency Input Return Loss Gps D IRL % dB


1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes AN1955. 3. Each side of device measured separately. 4. Measurement made with device in push--pull configuration. (continued)


Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued)

Characteristic Power Gain Drain Efficiency Input Return Loss Symbol Gps D IRL Min Typ 67 --10.2 Max Unit % dB Typical Performance 352.2 MHz (In Freescale 352.2 MHz Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 150 mA, Pout W CW


Typical Performance 500 MHz (In Freescale 500 MHz Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 150 mA, Pout 1000 W Peak (200 W Avg.), = 500 MHz, 100 sec Pulse Width, 20% Duty Cycle Power Gain Drain Efficiency Input Return Loss Gps D IRL % dB

검색 소자 모델 : "MRF6V" 포함 단어 15
부품 번호 제조업체 꾸러미 수량 제품 요약
MRF6V3090NR1 Freescale / NXP TO-270 70
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MRF6VP41KHR7 관련 제품 이미지
left
  • MRF6V3090NR1
  • MRF6VP121KHR6
  • MRF6VP3450HR6
  • MRF6VP14KH
  • MRF6VP11KHR
  • MRF6VP41KHR
  • MRF6VP2600H
  • MRF6V2300N
  • MRF6VP3450H
  • MRF6V14300H
  • MRF6V2150NB
  • MRF6V2150NBR1
  • MRF6V2150NR1
  • MRF6V2300NBR1
  • MRF6VP41KHR6
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MRF6VP41KHR7 관련 키워드.
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